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Si2302CDS
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
? TrenchFET ? Power MOSFET
V DS (V)
20
R DS(on) ( ? )
0.057 at V GS = 4.5 V
0.075 at V GS = 2.5 V
I D (A)
2.9
2.6
Q g (Typ.)
3.5
?
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
? Load Switching for Portable Devices
? DC/DC Converter
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2302CDS (N2)*
* Marking Code
Ordering Information: Si2302CDS-T1-E3 (Lead (Pb)-free)
Si2302CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
20
±8
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current b
T A = 25 °C
T A = 70 °C
I D
I DM
2.9
2.3
10
2.6
2.1
A
Continuous Source Current (Diode Conduction) a
I S
0.72
0.6
Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
0.86
0.55
- 55 to 150
0.71
0.46
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot
t ? 5s
Steady State
Steady State
R thJA
R thJF
120
140
62
145
175
78
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 68645
S12-2336-Rev. D, 01-Oct-12
For technical questions, contact: pmostechsupport@vishay.comm
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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